期刊
SCIENCE ADVANCES
卷 5, 期 7, 页码 -出版社
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/sciadv.aaw2347
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资金
- Ministry of Education (MOE) Tier 2 grants [R-143-000-682-112, R-143-000-A06-112]
- Director's Senior Research Fellowship from CA2DM at NUS (NRF Medium Sized Centre Programme) [R-723-000-001-281]
- Singapore MOE AcRF Tier 2 [MOE2017-T2-2-140]
- National University of Singapore Young Investigator Award [R-607-000-094-133]
- NSF CAREER grant [DMR-1455346]
- Air Force Office of Scientific Research grant [FA9550-17-1-0304]
- National Research Foundation of Singapore under its Medium-Sized Centre Programme
- MOE, Singapore, under AcRF Tier 2 [MOE2015-T2-2-123, MOE2017-T2-1-134]
- MOE, Singapore, under AcRF Tier 1 [R-144-000-387-114]
Understanding the remarkable excitonic effects and controlling the exciton binding energies in two-dimensional (2D) semiconductors are crucial in unlocking their full potential for use in future photonic and optoelectronic devices. Here, we demonstrate large excitonic effects and gate-tunable exciton binding energies in single-layer rhenium diselenide (ReSe2) on a back-gated graphene device. We used scanning tunneling spectroscopy and differential reflectance spectroscopy to measure the quasiparticle electronic and optical bandgap of single-layer ReSe2, respectively, yielding a large exciton binding energy of 520 meV. Further, we achieved continuous tuning of the electronic bandgap and exciton binding energy of monolayer ReSe2 by hundreds of milli-electron volts through electrostatic gating, attributed to tunable Coulomb interactions arising from the gate-controlled free carriers in graphene. Our findings open a new avenue for controlling the bandgap renormalization and exciton binding energies in 2D semiconductors for a wide range of technological applications.
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