期刊
NATIONAL SCIENCE REVIEW
卷 6, 期 4, 页码 669-683出版社
OXFORD UNIV PRESS
DOI: 10.1093/nsr/nwz101
关键词
domain wall; BiFeO3; ferroelectric; conductivity; photovoltaics; thin film
资金
- US Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [DE-SC0014430]
Domain walls (DWs) in ferroelectrics are atomically sharp and can be created, erased, and reconfigured within the same physical volume of ferroelectric matrix by external electric fields. They possess a myriad of novel properties and functionalities that are absent in the bulk of the domains, and thus could become an essential element in next-generation nanodevices based on ferroelectrics. The knowledge about the structure and properties of ferroelectric DWs not only advances the fundamental understanding of ferroelectrics, but also provides guidance for the design of ferroelectric-based devices. In this article, we provide a review of structures and properties of DWs in one of the most widely studied ferroelectric systems, BiFeO3 thin films. We correlate their conductivity and photovoltaic properties to the atomic-scale structure and dynamic behaviors of DWs.
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