Fabrication of ZnO nanostructures with tunable luminescence, electrical properties: effect of annealing reaction temperature, ligand and seed layer

In present manuscript, the optical and electrical properties of ZnO thin films under the effect of ligand, synthesis & annealing temperature, seed layer have been studied in detail. ZnO thin film grown at 80 degrees C reaction temperature tuned transmittance (at 550 nm) to similar to 37% (post-annealed sample) as compared to pre-annealed samples' similar to 5%. Observed Refractive index (n) found inversely proportional to their transmittance & refractive index (n) for corresponding sample has been tuned from 1.75 to 1.26. The intensity ratio of near band emission (I-NBE) to deep band emission (I-DBE) is drastically enhanced after annealing of ZnO thin films which is confirmed in photoluminesecnce study. The uniform & dense ZnO nanorods' growth, optimum transparency & prominent UV range dominated emission bring resistivity down to 10(12) ohm-cm. The synthesized ZnO thin films having best suited structural, optical and electrical properties which can be utilized in fabrications of low cost luminesent devices.