期刊
PHYSICAL REVIEW APPLIED
卷 11, 期 6, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevApplied.11.061006
关键词
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资金
- Army Research Office [W911NF-15-1-0149]
- DARPA [D18AC0025]
- Gordon and Betty Moore Foundation's EPiQS Initiative [GBMF4535]
- Princeton Center for Complex Materials
- National Science Foundation Materials Research Science and Engineering Center [DMR-1420541]
Silicon spin qubits are a promising quantum-computing platform offering long coherence times, small device sizes, and compatibility with industry-backed device-fabrication techniques. In recent years, high-fidelity single-qubit and two-qubit operations have been demonstrated in Si. Here we demonstrate coherent spin control in a quadruple quantum dot fabricated from isotopically enriched Si-28. We tune the ground-state charge configuration of the quadruple dot down to the single-electron regime and demonstrate tunable interdot tunnel couplings as large as 20 GHz, which enables exchange-based two-qubit gate operations. Site-selective single spin rotations are achieved with the use of electric dipole spin resonance in a magnetic field gradient. We execute a resonant controlled-NOT gate between two adjacent spins in 270 ns.
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