期刊
NANOMATERIALS
卷 9, 期 7, 页码 -出版社
MDPI
DOI: 10.3390/nano9070926
关键词
Infrared; SWIR sensor; PbS; Quantum dots; Lead sulfide
类别
资金
- National Research Foundation of Korea (NRF) - Korea Government (MSIP) [NRF 2017R1D1A3B03032042]
- BK21 Plus project - Ministry of Education, Korea [21A20131600011]
- Samsung Electronics
Shortwave infrared (SWIR) sensors have attracted interest due to their usefulness in applications like military and medical equipment. SWIR sensors based on various materials are currently being studied. However, most SWIR detectors need additional optical filters and cooling systems to detect specific wavelengths. In order to overcome these limitations, we proposed a solution processed SWIR sensor that can operate at room temperature using lead chloride (PbS) QDs as a photoactive layer. Additionally, we adapted zinc oxide (ZnO) nanoparticles (NPs) as an electron transport layer (ETL) to improve the sensitivity of a PbS SWIR sensor. In this study, PbS SWIR sensors with and without a ZnO NPs layer were fabricated and their current-voltage (I-V) characteristics were measured. The on/off ratio of the PbS SWIR sensor with ZnO NPs was 2.87 times higher than that of the PbS SWIR sensor without ZnO NPs at the maximum current difference. The PbS SWIR sensor with ZnO NPs showed more stable current characteristics than that without ZnO NPs because of the ZnO NPs' high electron mobility and proper lowest unoccupied molecular orbital (LUMO) level.
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