期刊
APPLIED PHYSICS REVIEWS
卷 6, 期 2, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.5088578
关键词
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资金
- [OPUS/UMO-2015/17/B/ST5/01753]
- [OPUS/UMO-2015/19/B/ST7/02200]
- [OPUS/UMO-2017/27/B/ST7/01507]
Since the discovery of graphene, its applications to electronic and optoelectronic devices have been intensively and thoroughly researched. Extraordinary and unusual electronic and optical properties make graphene and other two-dimensional (2D) materials promising candidates for infrared and terahertz (THz) photodetectors. Until now, however, 2D material-based performance is lower in comparison with those of infrared and terahertz detectors existing in the global market. This paper gives an overview of emerging 2D material detectors' performance and comparison with the traditionally and commercially available ones in different applications in high operating temperature conditions. The most effective single graphene detectors are THz detectors utilizing the plasma rectification effect in the field-effect transistors. Most of the 2D layered semiconducting material photodetectors operate in the visible and near-infrared regions, and generally, their high sensitivity does not coincide with the fast response time, which limits real detector functions.
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