Scalable Large-Area p-i-n Light-Emitting Diodes Based on WS2 Monolayers Grown via MOCVD

Transition metal dichalcogenides (TMDCs) represent a novel and sustainable material basis for ultrathin optoelectronic devices. Although various approaches toward light-emitting devices, e.g., based on exfoliated or chemical vapor deposited (CVD) TMDC monolayers, have been reported, they all suffer from limited scalability and reproducibility required for industrial fabrication. Here, we demonstrate a light-emitting device in a scalable approach by embedding metal-organic (MO-)CVD WS2 monolayers into a vertical p-i-n device architecture using organic and inorganic injection layers. Red electroluminescence is emitted from an active area of 6 mm(2) starting already at a driving voltage of about 2.5 V.