相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures
Jangyup Son et al.
NATURE COMMUNICATIONS (2018)
Dielectric properties of hexagonal boron nitride and transition metal dichalcogenides: from monolayer to bulk
Akash Laturia et al.
NPJ 2D MATERIALS AND APPLICATIONS (2018)
Sub-10 nm Nanopattern Architecture for 2D Material Field-Effect Transistors
Kai Xu et al.
NANO LETTERS (2017)
Large-Area CVD-Grown Sub-2 V ReS2 Transistors and Logic Gates
Ajjiporn Dathbun et al.
NANO LETTERS (2017)
Thickness-dependent Schottky barrier height of MoS2 field-effect transistors
Junyoung Kwon et al.
NANOSCALE (2017)
Contact Effect of ReS2/Metal Interface
Jae Young Park et al.
ACS APPLIED MATERIALS & INTERFACES (2017)
Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides
Changsik Kim et al.
ACS NANO (2017)
Highly Sensitive Detection of Polarized Light Using Anisotropic 2D ReS2
Fucai Liu et al.
ADVANCED FUNCTIONAL MATERIALS (2016)
High-Performance 2D Rhenium Disulfide (ReS2) Transistors and Photodetectors by Oxygen Plasma Treatment
Jaewoo Shim et al.
ADVANCED MATERIALS (2016)
P-Type Polar Transition of Chemically Doped Multilayer MoS2 Transistor
Xiaochi Liu et al.
ADVANCED MATERIALS (2016)
MoS2 transistors with 1-nanometer gate lengths
Sujay B. Desai et al.
SCIENCE (2016)
Van der Waals heterostructures and devices
Yuan Liu et al.
NATURE REVIEWS MATERIALS (2016)
Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier
Yuanyue Liu et al.
SCIENCE ADVANCES (2016)
Low Power Consumption Complementary Inverters with n-MoS2 and p-WSe2 Dichalcogenide Nanosheets on Glass for Logic and Light-Emitting Diode Circuits
Pyo Jin Jeon et al.
ACS APPLIED MATERIALS & INTERFACES (2015)
ReS2-Based Field-Effect Transistors and Photodetectors
Enze Zhang et al.
ADVANCED FUNCTIONAL MATERIALS (2015)
Sulfur vacancy activated field effect transistors based on ReS2 nanosheets
Kai Xu et al.
NANOSCALE (2015)
Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform
Xu Cui et al.
NATURE NANOTECHNOLOGY (2015)
Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors
Erfu Liu et al.
NATURE COMMUNICATIONS (2015)
A high-performance complementary inverter based on transition metal dichalcogenide field-effect transistors
Ah-Jin Cho et al.
NANOSCALE RESEARCH LETTERS (2015)
High-Gain Inverters Based on WSe2 Complementary Field-Effect Transistors
Mahmut Tosun et al.
ACS NANO (2014)
Influence of Stoichiometry on the Optical and Electrical Properties of Chemical Vapor Deposition Derived MoS2
In Soo Kim et al.
ACS NANO (2014)
Monolayer MoS2 Heterojunction Solar Cells
Meng-Lin Tsai et al.
ACS NANO (2014)
Electroluminescence and Photocurrent Generation from Atomically Sharp WSe2/MoS2 Heterojunction p-n Diodes
Rui Cheng et al.
NANO LETTERS (2014)
Photovoltaic and Photothermoelectric Effect in a Double-Gated WSe2 Device
Dirk J. Groenendijk et al.
NANO LETTERS (2014)
Atomically thin p-n junctions with van der Waals heterointerfaces
Chul-Ho Lee et al.
NATURE NANOTECHNOLOGY (2014)
Optoelectronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenide
Britton W. H. Baugher et al.
NATURE NANOTECHNOLOGY (2014)
Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p-n junctions
Jason S. Ross et al.
NATURE NANOTECHNOLOGY (2014)
Solar-energy conversion and light emission in an atomic monolayer p-n diode
Andreas Pospischil et al.
NATURE NANOTECHNOLOGY (2014)
Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics
Rui Cheng et al.
NATURE COMMUNICATIONS (2014)
Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling
Sefaattin Tongay et al.
NATURE COMMUNICATIONS (2014)
Ultrasensitive photodetectors based on monolayer MoS2
Oriol Lopez-Sanchez et al.
NATURE NANOTECHNOLOGY (2013)
One-Dimensional Electrical Contact to a Two-Dimensional Material
L. Wang et al.
SCIENCE (2013)
Synthesis and Characterization of Hexagonal Boron Nitride Film as a Dielectric Layer for Graphene Devices
Ki Kang Kim et al.
ACS NANO (2012)
Integrated Circuits Based on Bilayer MoS2 Transistors
Han Wang et al.
NANO LETTERS (2012)
Gate-Activated Photoresponse in a Graphene p-n Junction
Max C. Lemme et al.
NANO LETTERS (2011)
Single-layer MoS2 transistors
B. Radisavljevic et al.
NATURE NANOTECHNOLOGY (2011)
Emerging Photoluminescence in Monolayer MoS2
Andrea Splendiani et al.
NANO LETTERS (2010)
Boron nitride substrates for high-quality graphene electronics
C. R. Dean et al.
NATURE NANOTECHNOLOGY (2010)