期刊
SCIENTIFIC REPORTS
卷 9, 期 -, 页码 -出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/s41598-019-44421-x
关键词
-
资金
- Creative Materials Discovery Program through the National Research Foundation of Korea (NRF) - Ministry of Science, ICT and Future Planning [2017M3D1A1040688]
Amorphous oxide semiconductor (AOS)-based Schottky diodes have been utilized for selectors in crossbar array memories to improve cell-to-cell uniformity with a low-temperature process. However, thermal instability at interfaces between the AOSs and metal electrodes can be a critical issue for the implementation of reliable Schottky diodes. Under post-fabrication annealing, an excessive redox reaction at the ohmic interface can affect the bulk region of the AOSs, inducing an electrical breakdown of the device. Additionally, structural relaxation (SR) of the AOSs can increase the doping concentration at the Schottky interface, which results in a degradation of the rectifying performance. Here, we improved the thermal stability at AOS/metal interfaces by regulating the oxygen vacancy (V-o) concentration at both sides of the contact. For a stable quasi-ohmic contact, a Cu-Mn alloy was introduced instead of a single component reactive metal. As Mn only takes up O in amorphous In-Ga-Zn-O (a-IGZO), excessive V-o generation in bulk region of a-IGZO can be prevented. At the Schottky interfaces, the barrier characteristics were not degraded by thermal annealing as the Ga concentration in a-IGZO increased. Ga not only reduces the inherent V-o concentration but also retards SR, thereby suppressing tunneling conduction and enhancing the thermal stability of devices.
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