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S. Wirths et al.
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Roman Koerner et al.
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R. Geiger et al.
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Alan Y. Liu et al.
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Direct bandgap germanium-on-silicon inferred from 5.7% ⟨100⟩ uniaxial tensile strain [Invited]
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M. J. Sueess et al.
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Carrier mobility in strained Ge nanowires
Yann-Michel Niquet et al.
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Lee Carroll et al.
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An electrically pumped germanium laser
Rodolfo E. Camacho-Aguilera et al.
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Top-down fabricated silicon nanowires under tensile elastic strain up to 4.5%
R. A. Minamisawa et al.
NATURE COMMUNICATIONS (2012)
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Y. Bai et al.
APPLIED PHYSICS LETTERS (2011)
Rebalancing of internally generated carriers for mid-infrared interband cascade lasers with very low power consumption
I. Vurgaftman et al.
NATURE COMMUNICATIONS (2011)
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Onsite matrix elements of the tight-binding Hamiltonian of a strained crystal: Application to silicon, germanium, and their alloys
Y. M. Niquet et al.
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Lien T. Ngo et al.
NANO LETTERS (2006)
Inter-valence-band electronic Raman scattering due to photoexcited holes in Ge1-xSix
E Nazvanova et al.
PHYSICAL REVIEW B (2000)