期刊
SYNTHETIC METALS
卷 253, 期 -, 页码 40-47出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.synthmet.2019.05.001
关键词
Ambipolar; Organic thin-film transistor; Bulk heterojunction; Bilayer; Semiconductor
资金
- National Research Foundation of Korea (NRF) - Korean government (MSIT) [NRF-2017R1A2B4001955]
- Seoul Science High School RE Program
Ambipolar thin-film transistors are fabricated employing p-channel (2-decyl-7-phenylbenzo[b]benzo [4,5]thieno [2,3-d]thiophene; Ph-BTBT-C10) and n-channel (N,N'-di-n-octyl-3,4,9,10-perylenetetracarboxylic diimide; PTCDI-C8) semiconductors in bilayer and bulk heterojunction architecture. Bilayer organic semiconductors with small thickness of the first layer exhibit ambipolar device characteristics with relatively poor electrical performance. On the other hand, bulk heterojunction organic thin-film transistors (OTFTs) with optimized blend ratio exhibited higher ambipolar charge transport properties with carrier mobility as high as 0.22 and 0.038 cm(2) V-1 s(-1) for hole and electron, respectively. Complementary-like inverters fabricated based on optimized bulk heterojunction OTFTs show high transfer gain of 96.
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