4.2 Article

TCAD SIMULATION AND PERFORMANCE ANALYSIS OF SINGLE AND DUAL GATE OTFTs

期刊

SURFACE REVIEW AND LETTERS
卷 27, 期 5, 页码 -

出版社

WORLD SCIENTIFIC PUBL CO PTE LTD
DOI: 10.1142/S0218625X19501452

关键词

Single gate OTFT; dual gate OTFT; numerical simulation; technology computer-aided design (TCAD)

资金

  1. SERB, DST Government of India [ECR/2017/000179]

向作者/读者索取更多资源

This paper presents finite element-based numerical simulation and performance analysis of dual and single gate pentacene-based organic thin film transistors (OTFTs) using technology computer-aided design (TCAD) tools. Electrical characteristics of the devices have been simulated using 2D numerical device simulation software ATLAS (TM) from Silvaco International. Also, device parameters like threshold voltage, mobility, transconductance, subthreshold swing and current on/off ratio of the single and dual gate OTFTs have been extracted and compared.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.2
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据