期刊
SOLAR ENERGY MATERIALS AND SOLAR CELLS
卷 194, 期 -, 页码 148-158出版社
ELSEVIER
DOI: 10.1016/j.solmat.2019.02.004
关键词
All-transparent oxide heterostructure; Energy efficient optoelectronics; Exciton band-to-band intermediate optical transitions; Ohmic current-voltage characteristics; Transient and steady state optoelectronic processes
资金
- Precedent Research Program by HDC-ICONTROLS
- Basic Science Research Program through the National Research Foundation of Korea (NRF) by the Ministry of Education [NRF-2018R1D1A1B07045336]
- Korea Research Fellowship Program through the NRF by the Ministry of Science and ICT [NRF-2015H1D3A1066311]
Heterostructure of wide-bandgap materials have great potential for use in transparent optoelectronics for examples ultraviolet photodetectors, transparent solar cells, and transparent electronics. This study demonstrates the exciton, band-to-band and intermediate-band optical transitions in a ZnO/NiO heterostructure at room temperature. This heterostructure exhibits Ohmic current-voltage characteristics close to that of various metal contacts such as Ag, C, Ni, and Au. Temperature-dependence studies revealed that the open-circuit voltage (V-OC) of ZnO/NiO heterostructure is limited by the charge-transfer potential, analogous to excitonic solar cells. A negligibly small dark current of 1.6 x 10(-8)A, a large Voc of 675 mV and a photoresponse speeds of 9.4 mu s make it promising for high-speed energy-efficient optoelectronics. The optoelectronic performances of the ZnO/NiO/Ag microink suggest that broadband photons can be utilized with incident photons to current conversion efficiencies (IPCEs) of 2% and 39% in the visible and ultraviolet regions, respectively which demonstrate that the ZnO/NiO heterostructure can acts as a broadband quantum optoelectronic device.
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