期刊
SOLAR ENERGY MATERIALS AND SOLAR CELLS
卷 194, 期 -, 页码 259-267出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.solmat.2019.02.025
关键词
CdTe; Group-V; Doping; Thin film; Photovoltaics; MOCVD
资金
- European Regional Development Fund through the Solar Photovoltaic Academic Research Consortium (SPARC II)
- Engineering and Physical Sciences Research Council (EPSRC), United Kingdom [EP/N024389/1]
- Engineering and Physical Sciences Research Council (EPSRC), United Kingdom via North East Centre for Energy Materials [EP/R021503/1]
- EPSRC [EP/N024389/1, EP/R021503/1, EP/N014057/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/N024389/1] Funding Source: researchfish
Doping of CdTe using Group-V elements (As, P, and Sb) has gained interest in pursuit of increasing the cell voltage of CdTe thin film solar devices. Studies on bulk CdTe crystals have shown that much higher acceptor concentration than the traditional copper treatment is possible with As, P or Sb, enabled by high process temperature and/or rapid thermal quenching under Cd overpressure. We report a comprehensive study on in-situ As doping of poly-crystalline CdTe solar cells by MOCVD, whereby high acceptor densities, approaching 3 x 10(16) cm(-3) were achieved at low growth temperature of 390 degrees C. No As segregation could be detected at grain boundaries, even for 10(19) As cm(-3). A shallow acceptor level (+ 0.1 eV) due to As-Te substitutional doping and deep-level defects were observed at elevated As concentrations. Devices with variable As doping were analysed. Narrowing of the depletion layer, enhancement of bulk recombination, and reduction in device current and red response, albeit a small near infrared gain due to optical gap reduction, were observed at high concentrations. Device modelling indicated that the properties of the n-type window layer and associated interfacial recombination velocity are highly critical when the absorber doping is relatively high, demonstrating a route for obtaining high cell voltage.
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