期刊
SENSORS AND ACTUATORS A-PHYSICAL
卷 291, 期 -, 页码 87-92出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.sna.2019.03.054
关键词
Graphene; Infrared photodetector; Schottky junction; Heterojunction
资金
- Nature Science Foundation of Anhui Province [J2014AKZR0059]
- Fundamental Research Funds for the Central Universities [JZ2015HGXJ0182]
- Key Project of Natural Science Foundation of the Anhui Higher Education Institutions [KJ2018A0341]
- Fuyang Normal University [2017JYXM43, 2018FSKJ13, 2018HXXM29]
Graphene has shown great potentials for new-generation photodetectors in view of its outstanding optical and electrical properties, especially its ultra-broad range absorption. Most of graphene(Gr)/Si hybrid two-dimensional(2D)-three-dimensional(3D) photodetectors, which offer a perspective on future application in integrated optoelectronics, are still however enabled the excellent detection on visible light. Herein, we reported a self-powered Cr/Si Schottky heterojunciton with a high sensivity to communication light of 1.55 mu m wavelenght by using graphene film as active area. The resultant photodetectors showed a high-speed response speed up to 5.0 mu s, togther with a responsivity approaching 39.5 mAW(-1), which are comparable with previous graphene-based photodetectors and superior to previous Gr/Si heterojunction. The high-performance of the schottky heterojunction can be ascribed to featuring a built-in field facilitating to separate photocarriers. Combined our results with the methodology of devcie fabrication, can be utilized as pathway for large-area integration of 1.55 mu m communication light photodetectors. (C) 2019 Elsevier B.V. All rights reserved.
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