Ga2O3 metal-oxide-semiconductor field effect transistors on sapphire substrate by MOCVD

Si-doped gallium oxide (Ga2O3) thin films were grown on a c-plane sapphire substrate by metalorganic chemical vapor deposition (MOCVD) and fabricated into metal oxide semiconductor field effect transistors (MOSFETs). The Ga2O3 MOSFETs exhibited effective gate modulation of the drain current with a complete channel pinch-off for V-G < -25 V, and the three-terminal off-state breakdown voltage was 390 V. The device shows a very low gate leakage current (similar to 50 pA mm(-1)), which led to a high on/off ratio of similar to 10(8). These transistor characteristics were stable from room temperature to 250 degrees C.