4.5 Article

Nanoscale thermal cloaking by in-situ annealing silicon membrane

期刊

PHYSICS LETTERS A
卷 383, 期 19, 页码 2296-2301

出版社

ELSEVIER SCIENCE BV
DOI: 10.1016/j.physleta.2019.04.038

关键词

Molecular dynamics; Thermal cloak; In-situ annealing; Phonon localization

资金

  1. National Natural Science Foundation of China [51606074, 51625601]
  2. Ministry of Science and Technology of the People's Republic of China [2017YFE0100600]

向作者/读者索取更多资源

With the advent of thermal metamaterials, many new thermal functionalities have been proposed, like thermal cloaking, concentrating, etc. However, these thermal functionalities are based on the transformation thermotics or scattering cancellation technique, which, derived from Fourier's law, cannot apply to the micro-/nanoscale counterparts. In this paper, we design a nanoscale thermal cloak based on a crystalline silicon (Si) membrane and investigate the in-plane phonon transport via non-equilibrium molecular dynamics (NEMD) simulation by in-situ tuning the thermal conductivity of the thermal cloak from crystalline Si to amorphous Si. The two-dimensional temperature profile is obtained, and the thermal cloaking effect is evaluated by the ratio of heat flux. By analyzing the phonon density of state (PDOS) and the mode participation ratio (MPR), the mechanism can be attributed to the phonon localization in the annealed cloaking region. The proposed nanoscale thermal cloak by in-situ tuned thermal conductivity, may trigger the development of nanoscale thermal functionalities and open avenues for and thermal management for nano-photonics and nano-electronics. (C) 2019 Elsevier B.V. All rights reserved.

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