期刊
PHYSICAL REVIEW LETTERS
卷 123, 期 2, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.123.026805
关键词
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资金
- National Science Foundation (NSF) [DMR-1508530]
- U.S. Department of Energy, Office of Science, Division of Materials Sciences and Engineering [10122]
- Department of Energy's Office of Biological and Environmental Research
- NSF [ECCS-1542015, DMR-1350273]
- State of North Carolina
- National Institute of Standards and Technology (NIST)
We report charge transfer and built-in electric fields across the epitaxial SrNbxTi1-xO3-delta/Si(001) interface. Electrical transport measurements indicate the formation of a hole gas in the Si and the presence of built-in fields. Hard x-ray photoelectron measurements reveal pronounced asymmetries in core-level spectra that arise from these built-in fields. Theoretical analysis of core-level spectra enables built-in fields and the resulting band bending to be spatially mapped across the heterojunction. The demonstration of tunable charge transfer, built-in fields, and the spatial mapping of the latter, lays the groundwork for the development of electrically coupled, functional heterojunctions.
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