期刊
PHYSICAL REVIEW LETTERS
卷 123, 期 1, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.123.016801
关键词
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资金
- Ministry of Education Academic Research Fund (MOE AcRF) Tier 1 [R-263-000-D61-114]
- SpOT-LITE programme (A*STAR) through RIE2020 funds from Singapore [A18A6b0057]
- National Science Foundation (NSF) [DMR-1406568]
- Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division
An intriguing property of a three-dimensional (3D) topological insulator (TI) is the existence of surface states with spin-momentum locking, which offers a new frontier of exploration in spintronics. Here, we report the observation of a new type of Hall effect in a 3D TI Bi2Se3 film. The Hall resistance scales linearly with both the applied electric and magnetic fields and exhibits a pi/2 angle offset with respect to its longitudinal counterpart, in contrast to the usual angle offset of pi/4 between the linear planar Hall effect and the anisotropic magnetoresistance. This novel nonlinear planar Hall effect originates from the conversion of a nonlinear transverse spin current to a charge current due to the concerted actions of spin-momentum locking and time-reversal symmetry breaking, which also exists in a wide class of noncentrosymmetric materials with a large span of magnitude. It provides a new way to characterize and utilize the nonlinear spin-to-charge conversion in a variety of topological quantum materials.
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