期刊
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
卷 13, 期 11, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssr.201900285
关键词
complementary resistive switching; conductive bridge random access memory; indium; resistive random access memory
资金
- Ministry of Science and Technology, Taiwan (MOST) [MOST-108-2823-8-110-001, MOST-107-2221-E-009-097-MY2]
This study proposes the design of conductive bridge random access memory (CBRAM) using an indium electrode, which diffuses into hafnium oxide. The device is found to exhibit good operating characteristics, maintaining a large operation window, low set and reset voltages, and advantageous operation speed, thereby reducing operating power consumption. Electrical experiments, transmission electron microscopy, and energy-dispersive spectroscopy confirm that the device exhibits the characteristics of a CBRAM device. In addition, due to the large operation window of this In electrode device, a combination of two of these CBRAM can act as a complementary resistive switching (CRS) device with a large memory window.
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