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Yichen Fang et al.
IEEE ELECTRON DEVICE LETTERS (2018)
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Stefano Ambrogio et al.
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Kibong Moon et al.
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Suppress variations of analog resistive memory for neuromorphic computing by localizing V-o formation
Wei Wu et al.
JOURNAL OF APPLIED PHYSICS (2018)
Challenges hindering memristive neuromorphic hardware from going mainstream
Gina C. Adam et al.
NATURE COMMUNICATIONS (2018)
Fully memristive neural networks for pattern classification with unsupervised learning
Zhongrui Wang et al.
NATURE ELECTRONICS (2018)
Resistive Memory-Based Analog Synapses The pursuit for linear and symmetric weight update
Jiyong Woo et al.
IEEE NANOTECHNOLOGY MAGAZINE (2018)
Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing
Zhongrui Wang et al.
NATURE MATERIALS (2017)
Arbitrary Spike Time Dependent Plasticity (STDP) in Memristor by Analog Waveform Engineering
Neeraj Panwar et al.
IEEE ELECTRON DEVICE LETTERS (2017)
PCMO-Based RRAM and NPN Bipolar Selector as Synapse for Energy Efficient STDP
S. Lashkare et al.
IEEE ELECTRON DEVICE LETTERS (2017)
Improving Analog Switching in HfOx-Based Resistive Memory With a Thermal Enhanced Layer
Wei Wu et al.
IEEE ELECTRON DEVICE LETTERS (2017)
Linking Conductive Filament Properties and Evolution to Synaptic Behavior of RRAM Devices for Neuromorphic Applications
Jiyong Woo et al.
IEEE ELECTRON DEVICE LETTERS (2017)
Face classification using electronic synapses
Peng Yao et al.
NATURE COMMUNICATIONS (2017)
Ultrafast RESET Analysis of HfOx-Based RRAM by Sub-Nanosecond Pulses
Chen Wang et al.
ADVANCED ELECTRONIC MATERIALS (2017)
Memristive neural network for on-line learning and tracking with brain-inspired spike timing dependent plasticity
G. Pedretti et al.
SCIENTIFIC REPORTS (2017)
Improved Synaptic Behavior Under Identical Pulses Using AlOx/HfO2 Bilayer RRAM Array for Neuromorphic Systems
Jiyong Woo et al.
IEEE ELECTRON DEVICE LETTERS (2016)
Low-Power and Highly Uniform 3-b Multilevel Switching in Forming Free TiO2-x-Based RRAM With Embedded Pt Nanocrystals
P. Bousoulas et al.
IEEE ELECTRON DEVICE LETTERS (2016)
TiOx-Based RRAM Synapse With 64-Levels of Conductance and Symmetric Conductance Change by Adopting a Hybrid Pulse Scheme for Neuromorphic Computing
Jaesung Park et al.
IEEE ELECTRON DEVICE LETTERS (2016)
Very Low-Programming-Current RRAM With Self-Rectifying Characteristics
Jiantao Zhou et al.
IEEE ELECTRON DEVICE LETTERS (2016)
Neuromorphic Learning and Recognition With One-Transistor-One-Resistor Synapses and Bistable Metal Oxide RRAM
Stefano Ambrogio et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2016)
A Mini Review of Neuromorphic Architectures and Implementations
Robert A. Nawrocki et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2016)
Optimized Programming Scheme Enabling Linear Potentiation in Filamentary HfO2 RRAM Synapse for Neuromorphic Systems
Jiyong Woo et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2016)
Electrode-induced digital-to-analog resistive switching in TaOx-based RRAM devices
Xinyi Li et al.
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A review of emerging non-volatile memory (NVM) technologies and applications
An Chen
SOLID-STATE ELECTRONICS (2016)
A magnetic synapse: multilevel spin-torque memristor with perpendicular anisotropy
Steven Lequeux et al.
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Valentina Cappello et al.
SCIENTIFIC REPORTS (2016)
Biorealistic Implementation of Synaptic Functions with Oxide Memristors through Internal Ionic Dynamics
Chao Du et al.
ADVANCED FUNCTIONAL MATERIALS (2015)
Microscopic Modeling of HfOx RRAM Operations: From Forming to Switching
Andrea Padovani et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2015)
Experimental Demonstration and Tolerancing of a Large-Scale Neural Network (165 000 Synapses) Using Phase-Change Memory as the Synaptic Weight Element
Geoffrey W. Burr et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2015)
Experimental Demonstration of a Second-Order Memristor and Its Ability to Biorealistically Implement Synaptic Plasticity
Sungho Kim et al.
NANO LETTERS (2015)
Fully parallel write/read in resistive synaptic array for accelerating on-chip learning
Ligang Gao et al.
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Training andoperation of an integrated neuromorphic network based on metal-oxide memristors
M. Prezioso et al.
NATURE (2015)
Memory leads the way to better computing
H. -S. Philip Wong et al.
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Multi-bit nonvolatile logic implemented with metal-oxide based resistive switching device
Bin Gao et al.
SOLID STATE COMMUNICATIONS (2015)
Characterization and Modeling of Nonfilamentary Ta/TaOx/TiO2/Ti Analog Synaptic Device
Yu-Fen Wang et al.
SCIENTIFIC REPORTS (2015)
Ultra-Low-Energy Three-Dimensional Oxide-Based Electronic Synapses for Implementation of Robust High-Accuracy Neuromorphic Computation Systems
Bin Gao et al.
ACS NANO (2014)
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Metallic to hopping conduction transition in Ta2O5-x/TaOy resistive switching device
Ye Zhang et al.
APPLIED PHYSICS LETTERS (2014)
A 130.7-mm(2) 2-Layer 32-Gb ReRAM Memory Device in 24-nm Technology
Tz-yi Liu et al.
IEEE JOURNAL OF SOLID-STATE CIRCUITS (2014)
Homogeneous barrier modulation of TaOx/TiO2 bilayers for ultra-high endurance three-dimensional storage-class memory
Chung-Wei Hsu et al.
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A Low Energy Oxide-Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation
Shimeng Yu et al.
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Improved Switching Uniformity and Low-Voltage Operation in TaOx-Based RRAM Using Ge Reactive Layer
Victor Yi-Qian Zhuo et al.
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Francesco M. Puglisi et al.
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Peng Huang et al.
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Duygu Kuzum et al.
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Nanoscale RRAM-based synaptic electronics: toward a neuromorphic computing device
Sangsu Park et al.
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Continuous Electrical Tuning of the Chemical Composition of TaOx-Based Memristors
Feng Miao et al.
ACS NANO (2012)
On the Switching Parameter Variation of Metal Oxide RRAM-Part II: Model Corroboration and Device Design Strategy
Shimeng Yu et al.
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Metal-Oxide RRAM
H. -S. Philip Wong et al.
PROCEEDINGS OF THE IEEE (2012)
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Feng Miao et al.
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Investigation of resistive switching behaviours in WO3-based RRAM devices
Li Ying-Tao et al.
CHINESE PHYSICS B (2011)
Low-Power and Highly Reliable Multilevel Operation in ZrO2 1T1R RRAM
Ming-Chi Wu et al.
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Shimeng Yu et al.
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Kyungah Seo et al.
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Demonstration of Conductive Bridging Random Access Memory (CBRAM) in logic CMOS process
C. Gopalan et al.
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On spike-timing-dependent-plasticity, memristive devices, and building a self-learning visual cortex
Carlos Zamarreno-Ramos et al.
FRONTIERS IN NEUROSCIENCE (2011)
Multilevel resistive switching in Ti/CuxO/Pt memory devices
Sheng-Yu Wang et al.
JOURNAL OF APPLIED PHYSICS (2010)
Nanoscale Memristor Device as Synapse in Neuromorphic Systems
Sung Hyun Jo et al.
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Yan Wang et al.
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H. -S. Philip Wong et al.
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