期刊
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
卷 216, 期 17, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.201900257
关键词
lifetime; recombination; silicon; superacid; surface passivation
资金
- EPSRC SuperSilicon PV project [EP/M024911/1]
- EPSRC Impact Acceleration Account [EP/R511808/1]
- EPSRC First Grant [EP/J01768X/2]
- EPSRC studentship [EP/N509796/1]
- EPSRC [EP/N509796/1, EP/M024911/1, EP/J01768X/2] Funding Source: UKRI
To improve silicon device fabrication processes, it is necessary to monitor bulk minority carrier lifetimes accurately, and this requires surface recombination to be well controlled and, ideally, minimized. Good surface passivation can result from thermal oxidation or by deposition of dielectrics (e.g., Al2O3, SiNx, and amorphous Si), but these forms of passivation can modify the lifetime of the material under investigation. Various schemes can passivate surfaces on a temporary basis without modifying the bulk, and, in this article, the virtues of the iodine-ethanol (I-E) temporary surface passivation scheme are explored. A procedure for preparing the wafer surfaces prior to passivation is developed. For the optimized pretreatment, a series of experiments on 3-5 omega cm float-zone wafers cut from the same ingot with different thicknesses is conducted. This enables the material's bulk lifetime to be measured at 10(15) cm(-3) injection as 46 ms, with the surface recombination velocity being 6.5 +/- 0.3 cm s(-1). I-E passivation is then compared to a recently developed superacid-derived temporary passivation scheme. Although the latter is superior on (100)-orientation substrates, I-E performs much better on (111)-orientation substrates, making it a better choice for (111)-orientation wafers, such as those used for power devices.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据