期刊
OPTICS EXPRESS
卷 27, 期 14, 页码 19348-19358出版社
OPTICAL SOC AMER
DOI: 10.1364/OE.27.019348
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资金
- National Natural Science Foundation of China [11574356, 11434010, 61635011, 61804177, 11804382]
- National Key Research and Development Program of China [2016YFA0300600, 2016YFA0301700]
- Key Research Program of Frontier Sciences, CAS [QYZDB-SSW-JSC009]
- Youth Innovation Promotion Association of CAS [2018011]
Direct epitaxial growth of O-band InAs/GaAs quantum-dot laser on Si substrates has been rapidly developing over the past few years. But most of current methodologies are not fully compatible with silicon-on-insulator (SOI) technology, which is the essential platform for silicon photonic devices. By implementing an in situ III-V/Si hybrid growth technique with (111)-faceted Si hollow structures, we demonstrate the first optically pumped InAs/GaAs quantum-dot microdisk laser on SOI substrates grown by molecular beam epitaxy (MBE). The microdisk laser on SOI is characterized with threshold pump power as low as 0.39 mW and a Q factor of 3900 at room temperature. Additionally, the compared device performance of InAs quantum-dot microdisk lasers on GaAs, Si (001) and SOI are simultaneously studied with identical epi-structures. (c) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
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