Extra-long and taper-free germanium nanowires: use of an alternative Ge precursor for longer nanostructures

One of the challenges in the development of germanium nanowires (Ge NWs) is to increase their length beyond the 10 mu m limit without enlarging the NW diameter, i.e. minimizing the tapering. Here we report how it is possible to overcome this hurdle by using isobutyl germane (iBuGe) as a metal organic precursor during MOCVD growth, instead of the commonly used germane. We have grown and characterized by transmission electron microscopy, scanning electron microscopy and Raman various samples and we have analyzed the effect of growth time, precursor flux and growth temperature on the NW length. The use of iBuGe coupled to optimized growth conditions permitted to obtain Ge NWs with lengths up to 30 mu m with minimal tapering. To explain why a new precursor has this impact on the morphology of the NWs we consider two possible causes: (i) the role of carbon radicals produced by isobutyl decomposition and (ii) the reduced growth rate of Ge on the sidewalls. On the basis of Raman characterization and temperature-dependence of tapering, we conclude that the reduced tapering is probably due to lower growth rates on the sidewalls.