期刊
NANOTECHNOLOGY
卷 30, 期 38, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/ab2b11
关键词
NEMS; nanowire; resonance; switch; Bi2Se3; GeSn
资金
- ERDF project 'Creation of nanoelectromechanical switches' [1.1.1.1/16/A/256]
- Science Foundation Ireland [14/IA/2513]
Electrostatically actuated nanobeam-based electromechanical switches have shown promise for versatile novel applications, such as low power devices. However, their widespread use is restricted due to poor reliability resulting from high jump-in voltages. This article reports a new method for lowering the jump-in voltage by inducing mechanical oscillations in the active element during the switching ON process, reducing the jump-in voltage by more than three times. Ge(0.9)1Sn(0.09) alloy and Bi2Se3 nanowire-based nanoelectromechanical switches were constructed in situ to demonstrate the operation principles and advantages of the proposed method.
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