期刊
NANOSCALE RESEARCH LETTERS
卷 14, 期 -, 页码 -出版社
SPRINGER
DOI: 10.1186/s11671-019-3063-2
关键词
HfO2-based FeFET; Memory window; Retention; Endurance; ZrO2 seed layer
资金
- National Natural Science Foundation of China [51702273]
- Huxiang Young Talents Plan Support Project of Hunan Province [2018RS3087]
- general project of Hunan Provincial Education Department [18C0108]
- Science and Technology Innovation Project of Hunan Province [2017XK2048]
The HfO2-based ferroelectric field effect transistor (FeFET) with a metal/ferroelectric/insulator/semiconductor (MFIS) gate stack is currently being considered as a possible candidate for high-density and fast write speed non-volatile memory. Although the retention performance of the HfO2-based FeFET with a MFIS gate stack could satisfy the requirements for practical applications, its memory window (MW) and reliability with respect to endurance should be further improved. This work investigates the advantage of employing ZrO2 seed layers on the MW, retention, and endurance of the Hf0.5Zr0.5O2 (HZO)-based FeFETs with MFIS gate stacks, by using fast voltage pulse measurements. It is found that the HZO-based FeFET with a ZrO2 seed layer shows a larger initial and 10-year extrapolated MW, as well as improved endurance performance compared with the HZO-based FeFET without the ZrO2 seed layer. The results indicate that employing of a direct crystalline high-k/Si gate stack would further improve the MW and reliability of the HfO2-based FeFETs.
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