期刊
NANO LETTERS
卷 19, 期 8, 页码 5410-5416出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.9b01907
关键词
Indium selenide; asymmetric structure; stacking sequence; robust piezoelectricity; piezo-responsivity; sensors
类别
资金
- National Natural Science Foundation of China [61390502, 61505033, 61771156]
- Foundation for Innovative Research Groups of the National Natural Science Foundation of China [51521003]
- Self-Planned Task of State Key Laboratory of Robotics and System, Harbin Institute of Technology [SKLRS201607B]
- Engineering Physics and Science Research Council of UK [EPSRC EP/P018998/1]
- Newton Mobility Grant through Royal Society [IE161019]
- Newton Mobility Grant through NSFC [IE161019]
- EPSRC [EP/P018998/1] Funding Source: UKRI
Piezoelectric two-dimensional (2D) van der Waals (vdWs) materials are highly desirable for applications in miniaturized and flexible/wearable devices. However, the reverse-polarization between adjacent layers in current 2D layered materials results in decreasing their in-plane piezoelectric coefficients with layer number, which limits their practical applications. Here, we report a class of 2D layered materials with an identical orientation of in-plane polarization. Their piezoelectric coefficients (e(22)) increase with layer number, thereby allowing for the fabrication of flexible piezotronic devices with large piezoelectric responsivity and excellent mechanical durability. The piezoelectric outputs can reach up to 0.363 V for a 7-layer alpha-In2Se3 device, with a current responsivity of 598.1 pA for 1% strain, which is 1 order of magnitude higher than the values of the reported 2D piezoelectrics. The self-powered piezoelectric sensors made of these newly developed 2D layered materials have been successfully used for real-time health monitoring, proving their suitability for the fabrication of flexible piezotronic devices due to their large piezoelectric responses and excellent mechanical durability.
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