期刊
NANO LETTERS
卷 19, 期 11, 页码 7598-7607出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.9b01726
关键词
2D TMDs; 2D layers; PtSe2; Kirigami; stretchable electronics; strain engineering
类别
资金
- University of Central Florida [20080742]
- University of Central Florida (VPR AECR award)
- Korea Institute of Energy Technology Evaluation and Planning (KETEP) of the Republic of Korea [20173010013340]
- Ministry of Trade, Industry & Energy (MOTIE) of the Republic of Korea [20173010013340]
- National Research Foundation of Korea (NRF) - Korean government [2018M3D1A1058794, 2017R1A5A1014862]
- National Research Foundation of Korea (NRF) - Korean government (SRC program: vdWMRC center)
- project titled Development of cleanup technology for spilled oil and floating HNS using nanostructured structures - Korea Coast Guard of the Korean government
- Korea Institute of Marine Science & Technology Promotion (KIMST) [201904372] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2018M3D1A1058794] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Two-dimensional transition-metal dichalcogenide (2D TMD) layers are highly attractive for emerging stretchable and foldable electronics owing to their extremely small thickness coupled with extraordinary electrical and optical properties. Although intrinsically large strain limits are projected in them (i.e., several times greater than silicon), integrating 2D TMDs in their pristine forms does not realize superior mechanical tolerance greatly demanded in high-end stretchable and foldable devices of unconventional form factors. In this article, we report a versatile and rational strategy to convert 2D TMDs of limited mechanical tolerance to tailored 3D structures with extremely large mechanical stretchability accompanying well-preserved electrical integrity and modulated transport properties. We employed a concept of strain engineering inspired by an ancient paper-cutting art, known as kirigami patterning, and developed 2D TMD-based kirigami electrical conductors. Specifically, we directly integrated 2D platinum diselenide (2D PtSe2) layers of controlled carrier transport characteristics on mechanically flexible polyimide (PI) substrates by taking advantage of their low synthesis temperature. The metallic 2D PtSe2/PI kirigami patterns of optimized dimensions exhibit an extremely large stretchability of 2000% without compromising their intrinsic electrical conductance. They also present strain-tunable and reversible photoresponsiveness when interfaced with semiconducting carbon nanotubes (CNTs), benefiting from the formation of 2D PtSe2/CNT Schottky junctions. Moreover, kirigami field-effect transistors (FETs) employing semiconducting 2D PtSe2 layers exhibit tunable gate responses coupled with mechanical stretching upon electrolyte gating. The exclusive role of the kirigami pattern parameters in the resulting mechanoelectrical responses was also verified by a finite-element modeling (FEM) simulation. These multifunctional 2D materials in unconventional yet tailored 3D forms are believed to offer vast opportunities for emerging electronics and optoelectronics.
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