期刊
NANO LETTERS
卷 19, 期 7, 页码 4551-4559出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.9b01412
关键词
VSe2; sublimed-salt-assisted chemical vapor deposition; spin-orbit coupling; weak antilocalization effect; electron-electron interactions
类别
资金
- National Key Research AMP
- Development Projects of China [2016YFA0202300, 2018FYA0305800]
- National Natural Science Foundation of China [61674170, 61888102]
- Strategic Priority Research Program of Chinese Academy of Sciences (CAS) [XDB30000000, XDB28000000]
- Youth Innovation Promotion Association of CAS [20150005]
With strong spin-orbit coupling (SOC), ultrathin two-dimensional (2D) transitional metal chalcogenides (TMDs) are predicted to exhibit weak antilocalization (WAL) effect at low temperatures. The observation of WAL effect in VSe2 is challenging due to the relative weak SOC and three-dimensional (3D) transport nature in thick VSe2. Here, we report on the observation of quasi-2D transport and WAL effect in sublimed-salt-assisted low-temperature chemical vapor deposition (CVD) grown few-layered high-quality VSe2 nanosheets. The WAL magnitudes in magnetoconductance can be perfectly fitted by the 2D Hikami-Larkin-Nagaoka (HLN) equation in the presence of strong SOC, by which the spin-orbit scattering length l(SO) and phase coherence length l phi have been extracted. The phase coherence length l? shows a power law dependence with temperature, l phi similar to T-1/2, revealing an electron-electron interaction-dominated dephasing mechanism. Such sublimed-salt-assisted growth of high-quality few-layered VSe2 and the observation of WAL pave the way for future spintronic and valleytronic applications.
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