Resistive switching device based on water and zinc oxide heterojunction for soft memory applications

Using the most important water to all life, we propose a new resistive switching memory based on water (H2O) and zinc oxide (ZnO) heterojunction. For active layer, the ZnO layer is fabricated on indium tin oxide (ITO) coated polyethylene terephthalate (PET) substrate through spin coater, and polydimethylsiloxane (PDMS) mold is engineered for water active layer. The Ag top electrode is patterned on the PDMS through commercialized Fujifilm DMP-3000, which is stacked upside-down on the engineered PDMS mold. The proposed resistive switching memory is switching between high resistance state (HRS) of 867.64 Omega and low resistance state (IRS) of 332.5152 on dual polarity voltage sweeping of +/- 4 V. The proposed device is stably worked over 100 endurance cycles, and consistently operated in the bending diameter of 5 mm and hard twisting test. We can say that this liquid component can be used to build a new type of soft electronics.