期刊
MATERIALS LETTERS
卷 246, 期 -, 页码 88-91出版社
ELSEVIER
DOI: 10.1016/j.matlet.2019.03.054
关键词
MnS; Graphitic carbon nitride; Doping; Supercapacitor and Sol-gel technique
资金
- Hindustan Institute of Technology and Science through CENCON
- Quantum functional Semiconductor Research Centre, Dongguk University, Seoul, South Korea
Graphitic carbon nitride doped Manganese sulfide (g-C3N4 doped MnS) nanoparticles are synthesized by Sol-gel technique and its structural and supercapacitive behavior are studied. X-ray diffraction pattern and Raman spectra results confirm the presence upsilon-MnS phase. Scanning and Transmission electron microscope image reveals the formation of spherical morphology with an average diameter of the particle is around 40 nm. g-C3N4 doped MnS electrode exhibits excellent supercapacitive behavior. The material delivers a high specific capacitance of 463.32 F g(-1) at the scan rate of 10 mV s(-1) and 98.6% specific capacitance retained after 2000 cycles. The existence of spherical morphology and doping of graphitic carbon nitride, facilitate the electron transport and improves the structural stability of the material. (C) 2019 Elsevier B.V. All rights reserved.
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