期刊
MATERIALS LETTERS
卷 244, 期 -, 页码 43-46出版社
ELSEVIER
DOI: 10.1016/j.matlet.2019.02.031
关键词
Wide bandgap; Microstructure; CIGS solar cells; Thin films; Electron beam induced current
资金
- National Natural Science Foundation of China [61804159, 61574157, 61774164]
- National Key R&D Program of China [2018YFB1500201, 2018YFB1500205]
- Shenzhen Basic Research Grant [JCYJ20150529143500956, JCYJ20150925163313898, JCYJ20160331193134437]
In this study, the thickness of the high-Ga content CuIn0.5Ga0.5Se2 (CIGS) absorber is optimized for highly efficient wide-bandgap CISG solar cells. Wide-bandgap (1.3 eV) CIGS solar cell with the highest efficiency of 16.3% and short circuit current density (J(SC)) of 31.4 mA/cm(2) is fabricated using a CIGS absorber as thin as 1.6 mu m. The highest open circuit voltage (V-oc) of 762 mV is achieved using a 1.2 mu m thick CIGS absorber without alkali post deposition treatment, but the efficiency is only 14.8% due to the low J(SC). The crystallinity of the wide-bandgap CIGS absorber is enhanced gradually by reducing the thickness of CIGS absorber from 2.2 to 1.2 mu m as confirmed by X-ray diffraction (XRD). The carrier collection length of the CIGS solar cells is found to increase gradually from thinning the CIGS absorber as revealed by scanning electron microscope equipped with electron-beam-induced current detector (SEM-EBIC). (C) 2019 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据