期刊
APPLIED SURFACE SCIENCE
卷 368, 期 -, 页码 449-455出版社
ELSEVIER
DOI: 10.1016/j.apsusc.2016.02.032
关键词
6H-SiC; Nanoscratching; Deformation
类别
资金
- National Key Basic Research and Development Program of China (973 program) [2011CB 013202]
- National Natural Science Foundation of China [51175126]
In order to investigate the deformation characteristics and material removing mechanism of the single crystal silicon carbide at the nanoscale, the nanoscratching tests were conducted on the surface of 6H-SiC (0001) by using Berkovich indenter. In this paper, a theoretical model for nanoscratching with Berkovich indenter is proposed to reveal the relationship between the applied normal load and the machined depth. The influences of the elastic recovery and the stress distribution of the material are considered in the developed theoretical model. Experimental and theoretical machined depths are compared when scratching in different directions. Results show that the effects of the elastic recovery of the material, the geometry of the tip and the stress distribution of the interface between the tip and sample have large influences on the machined depth which should be considered for this kind of hard brittle material of 6H-SiC. (C) 2016 Elsevier B.V. All rights reserved.
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