期刊
LASER & PHOTONICS REVIEWS
卷 13, 期 8, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/lpor.201900052
关键词
carrier dynamics; damage threshold; layered PtSe2; nonlinear optical absorption
资金
- National Natural Science Foundation of China (NSFC) [11874370, 61675217, 61875213]
- Strategic Priority Research Program of CAS [XDB16030700]
- Key Research Program of Frontier Science of CAS [QYZDB-SSW-JSC041]
- Program of Shanghai Academic Research Leader [17XD1403900]
- Natural Science Foundation of Shanghai [18ZR1444700]
- Shanghai Rising-Star Program [19QA1410000]
- Youth Innovation Promotion Association
- President's International Fellowship Initiative, CAS [2017VTA0010, 2017VTB0006, 2018VTB0007]
- Science Foundation Ireland [15/SIRG/3329]
- Science Foundation Ireland (SFI) [15/SIRG/3329] Funding Source: Science Foundation Ireland (SFI)
The demand for an ultrabroad optical material with a bandgap tunable from zero to at least 1-2 eV has been one of the driving forces for exploring new 2D materials since the emergence of graphene, transition metal dichalcogenides, and black phosphorus. As an ultra-broadband 2D material with energy bandgap ranging from 0 to 1.2 eV, PtSe2 shows much better air stability than its analogue, black phosphorous. In this work, the superior nonlinear optical performance and ultrafast dynamics of layered PtSe2, and signatures of the transition from semiconductor to semimetal are systematically studied. Combining with rate equations, first-principles calculation, and electrical measurements, a comprehensive understanding about the evolution of nonlinear absorption and carrier dynamics with increasing layer thickness is provided, indicating its promising potential in nanophotonic devices such as infrared detectors, optical switches, and saturable absorbers.
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