期刊
APPLIED SURFACE SCIENCE
卷 390, 期 -, 页码 385-392出版社
ELSEVIER
DOI: 10.1016/j.apsusc.2016.08.127
关键词
Electrochemically reduced graphene oxide; Graphene; Electron transfer; Defect density; Edge plane
类别
资金
- Shanghai Sailing Program Foundation [14YF1409500, 14YF1409700]
- Foundation of Shanghai Young Teachers in Universities or Colleges [ZZgcd14011]
- National Science Foundation of China [51602192, 11504229]
Electrochemically reduced graphene oxide (ERGO) is widely used to construct electrochemical sensors. Understanding the electron transfer behavior of ERGO is essential for its electrode material applications. In this paper, different morphologies of ERGO were prepared via two different methods. Compared to ERGO/GCEs prepared by electrochemical reduction of pre-deposited GO, more exposed edge planes of ERGO are observed on the surface of ERGO-GCE that was constructed by electrophoretic deposition of GO. The defect densities of ERGO were controlled by tuning the mass or concentration of GO. The electron transfer kinetics (k(0)) of GCE with different ERGOs was comparatively investigated. Owing to increased surface areas and decreased defect density, the k(0) values of ERGO/GCE initially increase and then decrease with incrementing of GO mass. When the morphology and surface real areas of ERGO-GCE are the same, an increased defect density induces an accelerated electron transfer rate. k(0) valuesof ERGO-GCEs are about 1 order of magnitude higher than those of ERGO/GCEs due to the difference in the amount of edge planes. This work demonstrates that both defect densities and edge planes of ERGO play crucial roles in electron transfer kinetics. (C) 2016 Elsevier B.V. All rights reserved.
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