期刊
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
卷 141, 期 30, 页码 11754-11758出版社
AMER CHEMICAL SOC
DOI: 10.1021/jacs.9b03453
关键词
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资金
- National Natural Science Foundation of China [51525202, 61574054, 61505051, 61635001]
- Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province
- Joint Research Fund for Overseas Chinese, Hong Kong and Macau Scholars of the National Natural Science Foundation [61528403]
- Foundation for Innovative Research Groups of NSFC [21521063]
Atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDCs) are attractive for applications in a wide range of optoelectronic devices, due to their tremendous interesting physical properties. However, the photoluminescence quantum yield (PLQY) of TMDCs has been found to be too low, due to abundant defects and strong many-body effect. Here, we present a direct physical vapor growth of WO3-WS2 bilayer heterostructures, with WO3 monolayer domains attached on the surface of large-size WS2 monolayers. Optical characterizations revealed that the PLQY of the as-grown WO3-WS2 heterostructures can reach up to 11.6%, which is 2 orders of magnitude higher than that of WS2 monolayers by the physical vapor deposition growth method (PVD-WS2) and about 13-times higher than that of mechanical exfoliated WS2 (ME-WS2) monolayers, representing the highest PLQY reported for direct growth TMDCs materials so far. The PL enhancement mechanism has been well investigated by time-resolved optical measurements. The fabrication of WO3-WS2 heterostructures with ultrahigh PLQY provides an efficient approach for the development of highly efficient 2D integrated photonic applications.
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