期刊
APPLIED SURFACE SCIENCE
卷 387, 期 -, 页码 103-108出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2016.06.085
关键词
ZnO nanowire arrays; Field emission; MgO buffer layer; Electron transport; Vertically aligned
类别
资金
- National Natural Science Foundation of China [50902065, 11474137, 51402139]
- Open Project of Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University [LZUMMM2015012]
- National Nature Science Young Foundation of China [10904057]
Field emitters based on ZnO nanowires and other nanomaterials are promising high-brightness electron sources for field emission display, microscopy and other applications. The performance of a ZnO nanowire field emitter is linked to the quality, conductivity and alignment of the nanowires on a substrate, therefore requiring ways to improve these parameters. Here, ZnO nanowire arrays were grown on ZnO seed layer on silicon substrate with MgO buffer between the seed layer and Si. The turn-on field and enhancement factor of these nanowire arrays are 3.79 V/mu m and 3754, respectively. These properties are improved greatly compared to those of ZnO nanowire arrays grown on ZnO seed layer without MgO buffer, which are 5.06 V/mu m and 1697, respectively. The enhanced field emission properties can be attributed to better electron transport in seed layer, and better nanowire alignment because of MgO buffer. (C) 2016 Elsevier B.V. All rights reserved.
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