4.5 Article

Structural, vibrational and electrical properties of type-II Dirac semimetal PtSe2 under high pressure

期刊

JOURNAL OF PHYSICS-CONDENSED MATTER
卷 31, 期 41, 页码 -

出版社

IOP PUBLISHING LTD
DOI: 10.1088/1361-648X/ab315e

关键词

high pressure; type-II Dirac semimetal; PtSe2

资金

  1. National Key RAMP
  2. D Program of China [2018YFA0305700, 2016YFA0401804]
  3. NSFC [U1632275, 11574323, 11874362, 11804344, 11704387, 11605276]
  4. NSF of Anhui Province [1908085QA18, 1708085QA19, 1808085MA06]
  5. Users with Excellence Project of Hefei Science Center CAS [2018HSC-UE012]
  6. Major Program of Development Foundation of Hefei Center for Physical Science and Technology [2018ZYFX002]

向作者/读者索取更多资源

We present a high-pressure study of type-II Dirac semimetal PtSe2 single crystals through synchrotron x-ray diffraction (XRD), electrical transport and Raman scattering measurements in diamond anvil cells with pressures up to 36.1-42.3 GPa, from which two critical pressure points associated with unusual electron-phonon coupling are unraveled. We show that both resistance and phonon linewidth of Raman modes display anomalies at the first critical pressure of P-r similar to 10GPa, in accordance with a scenario of pressure-induced disappearance/appearance of type-II/type-I Dirac points around P-r predicted previously. The second critical pressure P-c similar to 20 GPa may correspond to a structural crossover of PtSe2 from quasi-2D lattice to 3D network, which is revealed via detailed analysis of the structural parameters extracted from XRD refinement, Raman modes shifts as well as parameters from fitting of the low-temperature resistance. Our results demonstrate great tunability of PtSe2 via strain engineering, thanks to the single p-orbital manifold derived electronic states that are susceptible to out-of-plane and in-plane distances.

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