期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 52, 期 34, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1361-6463/ab2859
关键词
C-face 3C-SiC; sublimation epitaxy; lateral enlargement; SiC power devices; low temperature photoluminescence; Raman
资金
- Swedish Research Council (Vetenskapsradet) [621-2014-5461, 2018-04670, 2016-05362, 621-2014-5825]
- Swedish Research Council for Environment, Agricultural Sciences and Spatial Planning (FORMAS) [2016-00559]
- Swedish Foundation for International Cooperation in Research and Higher Education (STINT) [CH2016-6722]
- AForsk foundation [16-399]
- Stiftelsen Olle Engkvist Byggmastare [189-0243]
- EU project CHALLENGE [720827]
- Swedish Research Council [2016-05362] Funding Source: Swedish Research Council
We present a comparative study of the C-face and Si-face of 3C-SiC(111) grown on off-oriented 4H-SiC substrates by the sublimation epitaxy. By the lateral enlargement method, we demonstrate that the high-quality bulk-like C-face 3C-SiC with thickness of similar to 1 mm can be grown over a large single domain without double positioning boundaries (DPBs), which are known to have a strongly negative impact on the electronic properties of the material. Moreover, the C-face sample exhibits a smoother surface with one unit cell height steps while the surface of the Si-face sample exhibits steps twice as high as on the C-face due to step-bunching. High-resolution XRD and low temperature photoluminescence measurements show that C-face 3C-SiC can reach the same high crystalline quality as the Si-face 3C-SiC. Furthermore, cross-section studies of the C-and Si-face 3C-SiC demonstrate that in both cases an initial homoepitaxial 4H-SiC layer followed by a polytype transition layer are formed prior to the formation and lateral expansion of 3C-SiC layer. However, the transition layer in the C-face sample is extending along the step-flow direction less than that on the Si-face sample, giving rise to a more fairly consistent crystalline quality 3C-SiC epilayer over the whole sample compared to the Si-face 3C-SiC where more defects appeared on the surface at the edge. This facilitates the lateral enlargement of 3C-SiC growth on hexagonal SiC substrates.
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