相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。The competing oxide and sub-oxide formation in metal-oxide molecular beam epitaxy
Patrick Vogt et al.
APPLIED PHYSICS LETTERS (2015)
Electrical compensation by Ga vacancies in Ga2O3 thin films
E. Korhonen et al.
APPLIED PHYSICS LETTERS (2015)
Conducting Si-doped γ-Ga2O3 epitaxial films grown by pulsed-laser deposition
Takayoshi Oshima et al.
JOURNAL OF CRYSTAL GROWTH (2015)
Monitoring the Formation of Nanowires by Line-of-Sight Quadrupole Mass Spectrometry: A Comprehensive Description of the Temporal Evolution of GaN Nanowire Ensembles
Sergio Fernandez-Garrido et al.
NANO LETTERS (2015)
Indium oxide-a transparent, wide-band gap semiconductor for (opto)electronic applications
Oliver Bierwagen
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2015)
Systematic investigation of the growth rate of β-Ga2O3(010) by plasma-assisted molecular beam epitaxy
Hironori Okumura et al.
APPLIED PHYSICS EXPRESS (2014)
Growth temperature dependences of structural and electrical properties of Ga2O3 epitaxial films grown on β-Ga2O3 (010) substrates by molecular beam epitaxy
Kohei Sasaki et al.
JOURNAL OF CRYSTAL GROWTH (2014)
Development of gallium oxide power devices
Masataka Higashiwaki et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2014)
Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial beta-Ga2O3 thin films grown by pulsed laser deposition
Daniel Splith et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2014)
Growth, characterization, and properties of bulk SnO2 single crystals
Zbigniew Galazka et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2014)
Homoepitaxial growth of beta-Ga2O3 layers by metal-organic vapor phase epitaxy
Guenter Wagner et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2014)
Device-Quality β-Ga2O3 Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
Kohei Sasaki et al.
APPLIED PHYSICS EXPRESS (2012)
Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
Masataka Higashiwaki et al.
APPLIED PHYSICS LETTERS (2012)
Experimental electronic structure of In2O3 and Ga2O3
Christoph Janowitz et al.
NEW JOURNAL OF PHYSICS (2011)
Oxygen vacancies and donor impurities in β-Ga2O3
J. B. Varley et al.
APPLIED PHYSICS LETTERS (2010)
Czochralski growth and characterization of β-Ga2O3 single crystals
Z. Galazka et al.
CRYSTAL RESEARCH AND TECHNOLOGY (2010)
β-Ga2O3 growth by plasma-assisted molecular beam epitaxy
Min-Ying Tsai et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2010)
Plasma-assisted molecular beam epitaxy of high quality In2O3(001) thin films on Y-stabilized ZrO2(001) using In as an auto surfactant
Oliver Bierwagen et al.
APPLIED PHYSICS LETTERS (2009)
Growth of β-Ga2O3 Single Crystals by the Edge-Defined, Film Fed Growth Method
Hideo Aida et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2008)
Ga2O3 thin film growth on c-plane sapphire substrates by molecular beam epitaxy for deep-ultraviolet photodetectors
Takayoshi Oshima et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2007)
Floating zone growth of β-Ga2O3:: A new window material for optoelectronic device applications
Y Tomm et al.
SOLAR ENERGY MATERIALS AND SOLAR CELLS (2001)
Deep-ultraviolet transparent conductive β-Ga2O3 thin films
M Orita et al.
APPLIED PHYSICS LETTERS (2000)
Czochralski grown Ga2O3 crystals
Y Tomm et al.
JOURNAL OF CRYSTAL GROWTH (2000)
分享论文
