4.7 Article

Zn-Ag-In-S quantum dot sensitized solar cells with enhanced efficiency by tuning defects

期刊

JOURNAL OF COLLOID AND INTERFACE SCIENCE
卷 547, 期 -, 页码 267-274

出版社

ACADEMIC PRESS INC ELSEVIER SCIENCE
DOI: 10.1016/j.jcis.2019.04.006

关键词

Quaternary quantum dot; High efficiency solar cell; Intrinsic defect; Composition

资金

  1. Science and Technology Commission of Shanghai Municipality [18ZR1409200]

向作者/读者索取更多资源

Being an important green quantum dot (QD), AgInS2 (AIS) has been used as sensitizers for QD sensitized solar cells (QDSCs) but with low power conversion efficiency (PCE). Herein, we have used oleylamine as surfactant to synthesize AIS and quaternary Zn-Ag-In-S (ZAIS) QDs via a facile and green method. The assembled AIS QDSCs show high PCE of 2.46%. After doping with Zn to form ZAIS QDs, the defect states have been modified, resulting in the enhanced photoluminescence. The assembled ZAIS QDSCs receive the greatly enhanced PCE of 4.50% with dramatically increased current density. Various characterizations verify that the high quality of QDs, large recombination resistance at QD/electrolyte interface, high photon to electron conversion efficiency and longer electron life are contributed by the tuned intrinsic defects which are strongly related with synthesis and composition, finally leading to the high performance of photovoltaic devices. (C) 2019 Elsevier Inc. All rights reserved.

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