期刊
APPLIED PHYSICS LETTERS
卷 109, 期 2, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4955463
关键词
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资金
- BASE Fellowship
- Indo-U.S. Science and Technology Forum (IUSSTF)
- U. S. National Science Foundation [DMR-1506595]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1506595] Funding Source: National Science Foundation
We report on the fabrication and characterization of a Schottky diode made using 2D germanane (hydrogenated germanene). When compared to germanium, the 2D structure has higher electron mobility, an optimal band-gap, and exceptional stability making germanane an outstanding candidate for a variety of opto-electronic devices. One-atom-thick sheets of hydrogenated puckered germanium atoms have been synthesized from a CaGe2 framework via intercalation and characterized by XRD, Raman, and FTIR techniques. The material was then used to fabricate Schottky diodes by suspending the germanane in benzonitrile and drop-casting it onto interdigitated metal electrodes. The devices demonstrate significant rectifying behavior and the outstanding potential of this material. Published by AIP Publishing.
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