High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth

Vertical GaN Schottky barrier diode (SBD) structures were grown by metal-organic chemical vapor deposition on free-standing GaN substrates. The carbon doping effect on SBD performance was studied by adjusting the growth conditions and spanning the carbon doping concentration between <= 3 x 10(15) cm(-3) and 3 x 10(19) cm(-3). Using the optimized growth conditions that resulted in the lowest carbon incorporation, a vertical GaN SBD with a 6-mu m drift layer was fabricated. A low turn-on voltage of 0.77V with a breakdown voltage over 800V was obtained from the device. (C) 2016 AIP Publishing LLC.