期刊
APPLIED PHYSICS LETTERS
卷 108, 期 13, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4945267
关键词
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资金
- Council for Science, Technology and Innovation (CSTI)
- NEDO
- Grants-in-Aid for Scientific Research [26246018, 26790043] Funding Source: KAKEN
We investigated the temperature-dependent electrical properties of Pt/Ga2O3 Schottky barrier diodes (SBDs) fabricated on n(-)-Ga2O3 drift layers grown on single-crystal n(+)-Ga2O3 (001) substrates by halide vapor phase epitaxy. In an operating temperature range from 21 degrees C to 200 degrees C, the Pt/Ga2O3 (001) Schottky contact exhibited a zero-bias barrier height of 1.09-1.15 eV with a constant near-unity ideality factor. The current-voltage characteristics of the SBDs were well-modeled by thermionic emission in the forward regime and thermionic field emission in the reverse regime over the entire temperature range. (C) 2016 AIP Publishing LLC.
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