4.6 Article

Spin rectification induced by spin Hall magnetoresistance at room temperature

期刊

APPLIED PHYSICS LETTERS
卷 109, 期 11, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.4962895

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资金

  1. National Basic Research Program of China [2013CB922103]
  2. NSF of China [11674159, 51471086, 11222435]
  3. NSF of Jiangsu Province [BK20130054]

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We have experimentally and theoretically investigated the dc voltage generation in the heterostructure of Pt and yttrium iron garnet under the ferromagnetic resonance. Besides a symmetric Lorenz line shape dc voltage, an antisymmetric Lorenz line shape dc voltage is observed in field scan, which can solely originate from the spin rectification effect due to the spin Hall magnetoresistance. The angular dependence of the dc voltage is theoretically analyzed by taking into account both the spin pumping and the spin rectification effects. We find that the experimental results are in excellent agreement with the theoretical model, further identifying the spin Hall magnetoresistance origin of the spin rectification effect. Moreover, the spin pumping and the spin rectification effects are quantitatively separated by their different angular dependence at particular experimental geometry. Published by AIP Publishing.

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