4.8 Article

Building MoS2/S-doped g-C3N4 layered heterojunction electrocatalysts for efficient hydrogen evolution reaction

期刊

JOURNAL OF CATALYSIS
卷 375, 期 -, 页码 441-447

出版社

ACADEMIC PRESS INC ELSEVIER SCIENCE
DOI: 10.1016/j.jcat.2019.06.026

关键词

g-C3N4; Conductivity; MoS2; Electron structure

资金

  1. National Natural Science Foundation of China [51571072, 51871078]
  2. Heilongjiang Science Foundation [E2018028]

向作者/读者索取更多资源

Developing the stable and efficient hydrogen evolution reaction (HER) electrocatalyst is greatly desirable for the production of hydrogen as a clean energy resource. Herein, we report a simple and effective approach to fabricate MoS2/S-doped g-C3N4 layered heterojunction electrocatalysts, which can adjust the electron structure, enhance the charge transfer rate and expose more active sites of MoS2 for HER. The optimized MoS2-C3N4 -60 sample shows a small onset overpotential as low as 115 mV, a low overpotential of 173 mV to achieve current density of 10 mA/cm(2), a low Tafel slope of 53 mV decade(-1), and a high turnover frequency of 0.16 H-2 s(-1) per active site at eta = 150 mV. This finding proposes a new strategy to fabricate 2D layered heterojunction for enhancing HER performance by rationally coupling two similar layered materials. (C) 2019 Elsevier Inc. All rights reserved.

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