N-channel field-effect transistors with an organic-inorganic layered perovskite semiconductor

Large electron injection barriers and electrode degradation are serious issues that need to be overcome to obtain n-channel operation in field-effect transistors with an organic-inorganic layered perovskite (C6H5C2H4NH3)(2)SnI4 semiconductor. By employing low-work-function Al source/drain electrodes and by inserting C-60 layers between the perovskite semiconductor and the Al electrodes to reduce the injection barrier and to suppress the electrode degradation, we demonstrate n-channel perovskite transistors with electron mobilities of up to 2.1 cm(2)/V s, the highest value ever reported in spin-coated perovskite transistors. The n-channel transport properties of these transistors are relatively stable in vacuum but are very sensitive to oxygen, which works as electron traps in perovskite and C-60 layers. In addition, grazing-incidence X-ray scattering and thermally stimulated current measurements revealed that crystallite size and electron traps largely affect the n-channel transport properties. Published by AIP Publishing.