期刊
APPLIED PHYSICS LETTERS
卷 109, 期 6, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4960651
关键词
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资金
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Korea Government Ministry of Science, ICT, and Future Planning [NRF-2015R1D1A1A09057970]
- National Research Foundation of Korea [21A20131812182] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Field effect transistors (FETs) using SiO2 and Al2O3 as the gate oxides for the back and front sides, respectively, were fabricated on exfoliated two-dimensional (2D) beta-Ga2O3 nano-belts transferred to a SiO2/Si substrate. The mechanical exfoliation and transfer process produced nano-belts with smooth surface morphologies and a uniform low defect density interface with the SiO2/Si substrate. The depletion mode nanobelt transistors exhibited better channel modulation with both front and back gates operational compared to either front or back-gating alone. The maximum transconductance was similar to 4.4 mS mm(-1) with front and back-gating and similar to 3.7 mS mm(-1) with front-gating only and a maximum drain source current density of 60 mA mm(-1) was achieved at a drain-source voltage of 10 V. The FETs had on/off ratios of similar to 10(5) at 25 degrees C with gate-source current densities of similar to 2 x 10(-3) mA mm(-1) at a gate voltage of -30 V. The device characteristics were stable over more than a month for storage in air ambient and the results show the potential of 2D beta-Ga2O3 for power nanoelectronics. Published by AIP Publishing.
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