Interface induced high temperature superconductivity in single unit-cell FeSe on SrTiO3(110)

We report high temperature superconductivity in one unit-cell (1-UC) FeSe films grown on SrTiO3 (STO)(110) substrate by molecular beam epitaxy. By in-situ scanning tunneling microscopy measurement, we observe a superconducting gap as large as 17 meV on the 1-UC FeSe films. Transport measurements on 1-UC FeSe/STO(110) capped with FeTe layers reveal superconductivity with an onset transition temperature (T-C) of 31.6 K and an upper critical magnetic field of 30.2 T. We also find that T-C can be further increased by external electric field although the effect is weaker than that on STO(001) substrate. Published by AIP Publishing.