期刊
APPLIED PHYSICS LETTERS
卷 108, 期 16, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4947468
关键词
-
资金
- NRI SWAN center
- NSF NNCI program
We report the fabrication and device characteristics of exfoliated, few-layer, ReSe2 field effect transistors (FET) and a method to improve contact resistance by up to three orders of magnitude using ultra-high-vacuum annealing (UHV). Many devices were studied in the absence of light and we found an average contact of 750 Omega . cm after UHV treatment. The median FET metrics were similar to other transition metal dichalcogenides: field effect mobility similar to 6.7 cm(2)/V . s, subthreshold swing similar to 1.2 V/decade, and I-on/I-off similar to 10(5). In devices with low R-c current saturation was observed and is attributed to injection limited transport. Published by AIP Publishing.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据